Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Počet záznamů: 1

1.

SYSNO	0502820
Title	Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
Author(s)	Hubáček, Tomáš (FZU-D)_ORCID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Kuldová, Karla (FZU-D)_{RID, ORCID} Oswald, Jiří (FZU-D)_{RID, ORCID} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Jarý, Vítězslav (FZU-D)_{RID, ORCID} Dominec, Filip (FZU-D)_{RID, ORCID} Slavická Zíková, Markéta (FZU-D)_ORCID Hájek, František (FZU-D)_ORCID Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Vetushka, Aliaksi (FZU-D)_{RID, ORCID} Ledoux, G. (FR) Dujardin, C. (FR) Nikl, Martin (FZU-D)_{RID, ORCID, SAI}
Corespondence/senior	Hubáček, Tomáš - Korespondující autor
Source Title	CrystEngComm. Roč. 21, č. 2 (2019), s. 356-362. - : Royal Society of Chemistry
Document Type	Článek v odborném periodiku
Grant	GA16-11769S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	690599, XE - EU countries
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	GB
Keywords	InGaN * MOVPE * QW number
Permanent Link	http://hdl.handle.net/11104/0294704

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Počet záznamů: 1