Počet záznamů: 1
Highly conductive and broadband transparent Zr-doped In.sub.2./sub.O.sub.3./sub. as front electrode for solar cells
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SYSNO ASEP 0500632 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells Tvůrce(i) Morales-Masis, M. (NL)
Rucavado, E. (CH)
Monnard, R. (CH)
Barraud, L. (CH)
Holovský, Jakub (FZU-D) RID, ORCID
Despeisse, M. (CH)
Boccard, M. (CH)
Ballif, C. (CH)Celkový počet autorů 8 Zdroj.dok. IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers - ISSN 2156-3381
Roč. 8, č. 5 (2018), s. 1202-1207Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova electron mobility ; heterojunctions ; solar cells ; silicon ; transparent electrodes ; wide band gap semiconductors ; zirconium-doped indium oxide (IO:Zr) Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP GA18-24268S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 UT WOS 000442366400006 EID SCOPUS 85049833869 DOI 10.1109/JPHOTOV.2018.2851306 Anotace Broadband transparent and highly conducting electrodes are key to avoid parasitic absorption and electrical losses in solar cells. Here, we propose zirconium-doped indium oxide (IO:Zr) as the front electrode in silicon heterojunction (SHJ) solar cells. The exceptional properties of this material rely on the combination of high-doping and high electron mobilities, achieving with this a wide optical band gap (3.5–4 eV), low free carrier absorption, and high lateral conductivity. A single film of IO:Zr has an electron mobility of 100 cm^2/Vs with a carrier density of 2.5–3x10^20 cm^-3, resulting in a sheet resistance of around 25 Ω/sq for 100-nm-thick films. Their implementation as a front electrode in SHJ solar cells results in an important gain in current density as compared to the standardly used Sn-doped indium oxide. SHJ devices with the optimized IO:Zr front electrode, resulting in current densities of 40 mA/cm2, a fill factor of 80%, and a conversion efficiency of 23.4%. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2019
Počet záznamů: 1