Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy

Romanyuk, Olexandr; Varga, Marián; Tulic, S.; Ižák, Tibor; Jiříček, Petr; Kromka, Alexander; Skakalova, V.; Rezek, Bohuslav

doi:https://dx.doi.org/10.1021/acs.jpcc.7b12334

Počet záznamů: 1

Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy

1.

SYSNO ASEP	0496453
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy
Tvůrce(i)	Romanyuk, Olexandr (FZU-D)_{RID, ORCID} Varga, Marián (FZU-D)_{RID, ORCID} Tulic, S. (AT) Ižák, Tibor (FZU-D)_RID Jiříček, Petr (FZU-D)_{RID, ORCID, SAI} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI} Skakalova, V. (AT) Rezek, Bohuslav (FZU-D)_{RID, ORCID}
Celkový počet autorů	8
Zdroj.dok.	Journal of Physical Chemistry C. - : American Chemical Society - ISSN 1932-7447 Roč. 122, č. 12 (2018), s. 6629-6636
Poč.str.	8 s.
Jazyk dok.	eng - angličtina
Země vyd.	US - Spojené státy americké
Klíč. slova	XPS ; graphene ; nanocrystalline diamonds
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
CEP	GF16-34856L GA ČR - Grantová agentura ČR
	LM2015087 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
Institucionální podpora	FZU-D - RVO:68378271
UT WOS	000429080000014
EID SCOPUS	85044762457
DOI	10.1021/acs.jpcc.7b12334
Anotace	Graphene on diamond has been attracting considerable attention due to the unique and highly beneficial features of this heterostructure for a range of electronic applications. Here, ultra-high vacuum X-ray photoelectron spectroscopy is used for in-situ analysis of the temperature dependence of the Ni-assisted thermally-induced graphitization process of intrinsic nanocrystalline diamond thin films (65 nm thickness, 50-80 nm grain size) on silicon wafer substrates. Three major stages of diamond film transformation are determined from XPS during the thermal annealing in the temperature range from 300 °C to 800 °C. The graphitization is facilitated by a disordered carbon interlayer that inherently forms between diamond and graphitic layers by Ni catalyst. Thus, the process results in formation of a multilayer heterostructure on silicon substrate.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2019

Počet záznamů: 1