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Diamond-coated three-dimensional GaN micromembranes: effect of nucleation and deposition techniques
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SYSNO ASEP 0454749 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Diamond-coated three-dimensional GaN micromembranes: effect of nucleation and deposition techniques Tvůrce(i) Ižák, Tibor (FZU-D) RID
Vanko, G. (SK)
Babchenko, Oleg (FZU-D) RID, ORCID
Potocký, Štěpán (FZU-D) RID, ORCID
Marton, M. (SK)
Vojs, M. (SK)
Choleva, P. (AT)
Kromka, Alexander (FZU-D) RID, ORCID, SAIZdroj.dok. Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972
Roč. 252, č. 11 (2015), s. 2585-2590Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova diamond film ; GaN micromembranes ; microwave chemical vapour deposition ; polymer-based nucleation Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP GP14-16549P GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 UT WOS 000364690400039 DOI 10.1002/pssb.201552227 Anotace In this work, we present technological issues on deposition of diamond films as a backside heat spreader for GaN membranes. We compared three nucleation techniques including standard ultrasonic seeding by diamond powder (DP), drop off with DP in solution and polymer based nucleation by PVA composite. The diamond growth was performed complementary by HFCVD or MWCVD. We found that standard nucleation techniques resulted in damaging of GaN membranes, or low nucleation efficiency in the Z-depth of the structures. Implementation of a novel nucleation method with PVA polymer composite led to coating of both bottom and top part of membrane including side walls. The coverage homogeneity was evaluated by scanning electron microscopy and Raman spectroscopy. The obtained results indicate that the efficiency (and/or nucleation density) of the polymer-based technique is comparable with standard ultrasonic seeding and could be used preferable for nucleation of soft and fragile substrates. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2016
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