Počet záznamů: 1  

Characterization and Calibration of Novel Semiconductor Detectors of Thermal Neutrons for ESA Space Applications

  1. 1.
    SYSNO ASEP0385327
    Druh ASEPC - Konferenční příspěvek (mezinárodní konf.)
    Zařazení RIVZáznam nebyl označen do RIV
    NázevCharacterization and Calibration of Novel Semiconductor Detectors of Thermal Neutrons for ESA Space Applications
    Tvůrce(i) Kohout, Z. (CZ)
    Granja, C. (CZ)
    Králík, M. (CZ)
    Owens, A. (FR)
    Venn, R. (GB)
    Jankowski, L. (GB)
    Pospíšil, S. (CZ)
    Sopko, B. (CZ)
    Vacík, Jiří (UJF-V) RID, ORCID, SAI
    Celkový počet autorů9
    Zdroj.dok.2011 IEEE Nuclear Science Symposium Conference Record. - : IEEE, 2011 - ISSN 1082-3654 - ISBN 978-1-4673-0118-3
    Rozsah strans. 400-404
    Poč.str.5 s.
    Akce2011 IEEE Nuclear Science Symposium Conference
    Datum konání23.10.2011-29.10.2011
    Místo konáníValencia
    ZeměES - Španělsko
    Typ akceWRD
    Jazyk dok.eng - angličtina
    Klíč. slovasemiconductor detectors ; thermal neutrons ; space applications
    Vědní obor RIVBG - Jaderná, atomová a mol. fyzika, urychlovače
    Institucionální podporaUJF-V - RVO:61389005
    DOI10.1109/NSSMIC.2011.6154526
    AnotaceFor the study and detection of neutrons in space environments such as planetary and earth orbiting missions semiconductor silicon diode detectors have been characterized and calibrated at various thermal neutron sources. Two types of diodes adapted for thermal neutron detection were investigated: silicon MESA planar detectors equipped with thin 6LiF layers and silicon heterodiodes with a layer of natural boron or enriched 10B. The response and absolute detection efficiency have been measured. The influence of bias voltage and converter layer thickness were studied. As neutron sources we used a homogenous isotropic thermal neutron field by a set of PuBe radionuclide sources placed in a graphite pile as well as a parallel thermal neutron beam with high Cd ratio (105) and suppressed gamma background. Depending on the converter layer thickness and/or boron layer thickness as well as the choice of the threshold level, efficiencies of approximately 1% are obtained for both the silicon diodes with thin 6LiF and the boron rich silicon detectors. These values guarantee optimal stability of operation in remote and different environments as well as maximum signal-to-noise ratio by enhanced suppression of unwanted signals and gamma background.
    PracovištěÚstav jaderné fyziky
    KontaktMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Rok sběru2013
Počet záznamů: 1  

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