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Development of n-on-p silicon sensors for very high radiation environments
- 1.UNNO, Y., AFFOLDER, A.A., ALLPORT, P.P., BATES, R., BETANCOURT, C., BÖHM, Jan, BROWN, H., BUTTAR, C., CARTER, J. R., CASSE, G., MIKEŠTÍKOVÁ, Marcela. Development of n-on-p silicon sensors for very high radiation environments. Nuclear Instruments & Methods in Physics Research Section A. 2011, 636(1), "S24"-"S30". ISSN 0168-9002. E-ISSN 1872-9576. Dostupné z: doi: 10.1016/j.nima.2010.04.080.
Počet záznamů: 1