Počet záznamů: 1
Stabilization of semiconductor surface reconstructions by configurational entropy
- 1.0353804 - FZÚ 2011 RIV US eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Grosse, F. - Proessdorf, A. - Braun, W. - Riechert, H.
Stabilization of semiconductor surface reconstructions by configurational entropy.
Physical Review. B. Roč. 82, č. 12 (2010), 125315/1-125315/5. ISSN 1098-0121. E-ISSN 2469-9969
Grant CEP: GA ČR GA202/07/0601; GA ČR GPP204/10/P028
Grant ostatní: AV CR - DFG bilateral(DE) 436 TSE 113/62/0-1
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: GaSb * surface reconstruction * DFT * entropy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.772, rok: 2010
Surface unit cells with a larger area and a reduced symmetry have a larger configurational entropy. The entropy may even stabilize reconstructions with higher energy at finite temperatures. We study the entropy contribution to surface reconstructions on the basis of ground-state calculations employing density-functional theory. Specifically, the ground-state GaSb(111)A surface reconstruction has a (2×2) symmetry, but at elevated temperatures, we experimentally observe the (2√3×2√3)-R30° symmetry in agreement with the theoretical results. The findings based on the general expressions are consistent with experimental data from other semiconductor surfaces.
Trvalý link: http://hdl.handle.net/11104/0192946
Počet záznamů: 1