Počet záznamů: 1
Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
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SYSNO 0132974 Název Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas Tvůrce(i) Nakahata, K. (JP)
Kamiya, T. (JP)
Fortmann, C. M. (JP)
Shimizu, I. (JP)
Stuchlíková, Hana (FZU-D)
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAIZdroj.dok. Journal of Non-Crystalline Solids. 266-269, - (2000), s. 341-346. - : Elsevier Druh dok. Článek v odborném periodiku Grant IAA1010809 GA AV ČR - Akademie věd GA202/98/0669 GA ČR - Grantová agentura ČR CEZ AV0Z1010914 - FZU-D Jazyk dok. eng Země vyd. NL Trvalý link http://hdl.handle.net/11104/0030966
Počet záznamů: 1