Počet záznamů: 1
Preparation and characterisation of A III B V semiconductor quantum-size structures by MOCVD technology
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SYSNO ASEP 0132425 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Preparation and characterisation of A III B V semiconductor quantum-size structures by MOCVD technology Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Melichar, Karel (FZU-D)
Šimeček, Tomislav (FZU-D)Source Title The Second China-Czech Symposium on Advanced Material and Devices for Optoelectronics / Yu J.. - : National Natural Sciences Foundation of China, 1999 Pages s. 16-23 Number of pages 8 s. Action China-Czech Symposium on Advanced Material and Devices for Optoelectronics /2./ Event date 13.09.1999-14.09.1999 VEvent location Beijing Country CN - China Language eng - English Country CN - China Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/99/1613 GA ČR - Czech Science Foundation (CSF) GA102/99/0414 GA ČR - Czech Science Foundation (CSF) GA202/98/0074 GA ČR - Czech Science Foundation (CSF) IAA1010807 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z1010914 - FZU-D Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2000
Počet záznamů: 1