ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. - Piscataway : IEEE, 2004 / Osvald J. ; Haščík Š.
- ISBN 0-7803-8535-7
Rozsah stran
s. 65-69
Poč.str.
4 s.
Akce
Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./
Datum konání
17.10.2004-21.10.2004
Místo konání
Smolenice
Země
SK - Slovensko
Typ akce
WRD
Jazyk dok.
eng - angličtina
Země vyd.
US - Spojené státy americké
Klíč. slova
epitaxial growth ; epitaxial layers ; nonlinear systems
Vědní obor RIV
JA - Elektronika a optoelektronika, elektrotechnika
CEP
GA102/03/0379 GA ČR - Grantová agentura ČR
KSK1010104 GA AV ČR - Akademie věd
Anotace
Applicability of the Burton-Cabrera-Frank model of crystal growth is limited in the case of LPE preparation of thick semiconductor layers due to volume diffusion of constituent atoms. This phenomenon can be accounted for by introducing negative growth-rate dependent correction to supersaturation. The resulting implicit nonlinear problem is solved using the technique of causal diagrams. Theoretical predictions are confronted with experimental data on the growth of thick InP and InP:Nd layers.
