High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films

0522073 - FZÚ 2020 RIV DE eng A - Abstrakt
Stuchlíková, The-Ha - Remeš, Zdeněk - Mortet, Vincent - Ashcheulov, Petr - Krivyakin, G.K. - Volodin, V. - Stuchlík, Jiří
High temperature PIN diodes based on amorphous hydrogenated silicon carbide and boron-doped diamond thin films.
Book of Abstracts of IWEPNM 2019. Berlin: Technische Universität Berlin Institut für Festkörperphysik, 2019 - (Machón, M.). s. 37-37
[International Winterschool on Electronic Properties of Novel Materials (IWEPNM) /33./. 09.03.2019-16.03.2019, Kirchberg]
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: PIN diodes * hydrogenated silicon carbide * boron doped diamond
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.iwepnm.org/fileadmin/user_upload/IWEPNM2019-Abstractbook.pdf

The novel a-SiC:H diode structures on transparent conductive boron-doped diamond (BDD), have been deposited by the PECVD. The future of in-situ integration of nanoparticles and quantum dots in thin film structures for optoelectronic applications requires deposition temperatures above 400C. On the boron-doped diamond were deposited thin film PIN structure on the base of a-SiC:H. The layers have been studied by the SEM, temperature resolved electrical conductivity, optical absorptance, photocurrent and PL spectroscopy. The BDD/a-SiC:H diodes have been characterized by I-V measurement and by EL spectroscopy

Trvalý link: http://hdl.handle.net/11104/0306575