InGaN diode pumped Pr:SrF.sub.2./sub. laser at 639 nm wavelength

0521876 - FZÚ 2020 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Fibrich, Martin - Doroshenko, M. - Šulc, J. - Konyushkin, V. - Nakladov, A. - Jelínková, H.
InGaN diode pumped Pr:SrF₂ laser at 639 nm wavelength.
Solid State Lasers XXVI: Technology and Devices. Bellingham: SPIE, 2017 - (Clarkson, W.; Shori, R.), s. 1-5, č. článku 1008220. Proceedings of SPIE, 10082. ISBN 978-151060605-0. ISSN 0277-786X.
[Solid State Lasers XXVI: Technology and Devices 2017. San Francisco (US), 30.01.2017-02.02.2017]
Institucionální podpora: RVO:68378271
Klíčová slova: Pr:SrF₂ * diode pumping * InGaN laser diode * visible solid-state laser
Obor OECD: Optics (including laser optics and quantum optics)

We report on Pr:SrF2 single crystal laser operation at 639nm wavelength under blue laser diode pumping. The laser system was operated in the pulsed regime at 100 Hz repetition rate and 2 ms pulse duration. Using 3.5W InGaN laser diode as a pump source, 6mW of the mean output power at 639nm was extracted from the Pr:SrF2 sample. The corresponding slope efficiency related to the absorbed mean power was 16.4 %.
Trvalý link: http://hdl.handle.net/11104/0306429