Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure

0502374 - FZÚ 2019 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Hájek, František - Hospodková, Alice - Oswald, Jiří - Slavická Zíková, Markéta
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the 8th Student scientific conference of solid state engineering and materials. Praha: České vysoké učení technické v Praze, 2018 - (Dragounová, K.; Koubský, T.; Kalvoda, L.; Čapek, J.; Trojan, K.; Kolenko, P.), s. 42-45. ISBN 978-80-01-06511-2.
[Student scientific conference of solid state engineering and materials /8./. Sedliště (CZ), 17.09.2018-21.09.2018]
Institucionální podpora: RVO:68378271
Klíčová slova: nitrides * quantum wells * luminescence * semiconductor doping
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.

Trvalý link: http://hdl.handle.net/11104/0294317