Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth

0496211 - FZÚ 2019 RIV PL eng A - Abstrakt
Dominec, Filip - Kuldová, Karla - Zíková, Markéta - Pangrác, Jiří - Hospodková, Alice
Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 153-153.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * QW * Buffer layer
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Detection and imaging of ionizing radiation is one of prospective applications of InGaN/GaN multiple quantum well structures. Besides efficiency and temporal resolution, spatial homogeneity is an important factor. We quantified it using 2D Fourier transform of cathodoluminescence images, separating the finest inhomogeneity caused by V-pits (100-500 nm) from one caused by dislocation bunching (1-2 μm) and from coarser modulation of QW efficiency. This approach, possibly combined with electron-energy and optical spectrum resolution, is useful for future high-performance imaging screen development.
Trvalý link: http://hdl.handle.net/11104/0289034