Increasing scintillator active region thickness by InGaN/GaN QW number

0496184 - FZÚ 2019 RIV PL eng A - Abstrakt
Vaněk, Tomáš - Hospodková, Alice - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Zíková, Markéta - Vetushka, Aliaksi
Increasing scintillator active region thickness by InGaN/GaN QW number.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 151-151.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN * QW number
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Luminescence results of InGaN/GaN multiple quantum well (QW) structures with number of QWs from 10 to 60 are studied in this work.The aim is to optimize a thickness of active region for maximization of the intensity of faster blue QW emission and suppression of the slower QW defect band luminiscence, which is undesired for fast scintillator application.
Trvalý link: http://hdl.handle.net/11104/0289013