Počet záznamů: 1
GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE
- 1.0471296 - FZÚ 2017 RIV DE eng A - Abstrakt
Supplie, O. - Brückner, S. - May, M.M. - Kleinschmidt, P. - Nägelein, A. - Paszuk, A. - Romanyuk, Olexandr - Grosse, F. - Hannappel, T.
GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE.
GCCCG-1/DKT2016. Dresden: TU Dresden, 2016. s. 40.
[German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./. 16.03.2016-18.03.2016, Dresden]
Institucionální podpora: RVO:68378271
Klíčová slova: GaP/Si * MOVPE * heterointerface
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
It was demonstrated how time-resolved RAS measurements enable to in situ monitor the GaP nucleation on Si. The GaP sublattice can be inverted by a 'rotation' of the Si dimers prior nucleation or more Ga-rich growth conditions. The impact of As on Si surface as well as GaP nucleation on top of this surface were investigated.
Trvalý link: http://hdl.handle.net/11104/0268689
Počet záznamů: 1