High temperature nanoindentation testing of amorphous SiC and B.sub.4./sub.C thin films

0470728 - FZÚ 2017 RIV CH eng C - Konferenční příspěvek (zahraniční konf.)
Čtvrtlík, Radim - Tomáštík, Jan - Schovánek, P.
High temperature nanoindentation testing of amorphous SiC and B₄C thin films.
Defect and Diffusion Forum. Vol. 368. Zürich: Trans Tech Publications Ltd, 2016, s. 115-118. ISBN 978-3-03835-720-9. ISSN 1012-0386.
[12th International Conference on Local Mechanical Properties. Liberec (CZ), 04.11.2016-06.11.2016]
Institucionální podpora: RVO:68378271
Klíčová slova: boron carbide * elevated temperatures * mechanical properties * nanoindentation * silicon carbide * thin films
Kód oboru RIV: JH - Keramika, žáruvzdorné materiály a skla

Amorphous silicon carbide (a-SiC) and boron carbide (a-B4C) thin films were deposited using reactive magnetron sputtering of SiC and B4C target, respectively. Nanoindentation tests performed up to 450 °C in air were performed to explore and compare their hardness and elastic modulus. Hardness of a-B4C film decreases at smaller rate in comparison to a-SiC film up to 450 °C. Similarly, elastic modulus value of B4C is more stable with temperature than that of a-SiC.
Trvalý link: http://hdl.handle.net/11104/0268308