Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures

0571963 - FZÚ 2024 RIV CH eng J - Článek v odborném periodiku
Bulgakov, Alexander - Beránek, Jiří - Volodin, V.A. - Cheng, Y. - Levy, Yoann - Nagisetty, S.S. - Zukerstein, Martin - Popov, A. A. - Bulgakova, Nadezhda M.
Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures.
Materials. Roč. 16, č. 9 (2023), č. článku 3572. E-ISSN 1996-1944
Grant CEP: GA MŠMT EF15_003/0000445
Grant ostatní: OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institucionální podpora: RVO:68378271
Klíčová slova: silicon–germanium multilayer structures * thin films * ultrashort infrared laser annealing * selective crystallization * defect accumulation * Raman spectroscopy
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 3.4, rok: 2022
Způsob publikování: Open access

Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si–Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization.
Trvalý link: https://hdl.handle.net/11104/0342818