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MoS2 stacking matters: 3R polytype significantly outperforms 2H MoS2 for the hydrogen evolution reaction

  1. 1.
    0545897 - ÚACH 2022 RIV GB eng J - Článek v odborném periodiku
    Luxa, J. - Spejchalova, L. - Jakubec, Ivo - Sofer, Z.
    MoS2 stacking matters: 3R polytype significantly outperforms 2H MoS2 for the hydrogen evolution reaction.
    Nanoscale. Roč. 13, č. 46 (2021), s. 19391-19398. ISSN 2040-3364. E-ISSN 2040-3372
    Institucionální podpora: RVO:61388980
    Klíčová slova: transition-metal dichalcogenides * phase * catalyst * sites
    Obor OECD: Inorganic and nuclear chemistry
    Impakt faktor: 8.307, rok: 2021
    Způsob publikování: Omezený přístup
    https://doi.org/10.1039/D1NR03284D

    Transition metal dichalcogenides (TMDs) are an intriguing family of materials with large application potential in a variety of scientific fields ranging from electronics to electrocatalysis. Within this group of materials, MoS2 has been attracting a lot of scientific attention due to its chemical and physical properties. In this report, we studied the exfoliation of the largely unexplored 3R MoS2 polytype prepared by high-temperature, high-pressure synthesis. Bulk as well as sodium naphthalenide exfoliated materials were studied in terms of their quality and performance for the hydrogen evolution reaction (HER). The HER performance was benchmarked versus the commonly available 2H polytype. The reported results show that the 3R polytype is more suitable for the conversion of MoS2 into the metallic 1T phase, which was attributed to surface oxidation occurring in the 2H polytype. Higher content of the 1T phase then resulted in an overall lower overpotential of0.25 V vs. RHE for the 3R polytype compared with the overpotential of0.30 V for the 2H polytype. These results show that the 3R polytype might serve as a better starting point for the synthesis of highly active chemically exfoliated MoS2 catalysts for hydrogen evolution.
    Trvalý link: http://hdl.handle.net/11104/0322519


    Vědecká data: RSC publishing
     
     
Počet záznamů: 1  

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