Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

0542725 - FZÚ 2022 RIV NL eng J - Článek v odborném periodiku
Hájek, František - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Horešovský, Robert - Kuldová, Karla
Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells.
Journal of Luminescence. Roč. 236, Aug (2021), č. článku 118127. ISSN 0022-2313. E-ISSN 1872-7883
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA TA ČR(CZ) FW03010298
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: nitrides * impurity * SIMS * InGaN/GaN
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.171, rok: 2021
Způsob publikování: Open access s časovým embargem

Zn contamination of InGaN/GaN multiple quantum well (MQW) structure from unknown source is found. A model describing concentration profile of Zn acceptor impurity in InGaN/GaN MQW structure is introduced and compared to measured values. The model is based on difference among the formation energies of acceptors in the InGaN quantum wells. A nice correlation of the model and experimental data helps to reveal origin of Zn impurity in InGaN quantum wells. Proposed methodology can be applied to different acceptor-like defects and shine light the upon enigma of high defect concentration in the bottom quantum wells grown atop the n-type buffer layer.
Trvalý link: http://hdl.handle.net/11104/0320090