Properties of boron-doped (113) oriented homoepitaxial diamond layers

0541744 - FZÚ 2022 RIV CH eng J - Článek v odborném periodiku
Mortet, Vincent - Taylor, Andrew - Lambert, Nicolas - Gedeonová, Zuzana - Fekete, Ladislav - Lorinčík, J. - Klimša, Ladislav - Kopeček, Jaromír - Hubík, Pavel - Šobáň, Zbyněk - Laposa, A. - Davydova, Marina - Voves, J. - Pošta, A. - Povolný, V. - Hazdra, P.
Properties of boron-doped (113) oriented homoepitaxial diamond layers.
Diamond and Related Materials. Roč. 111, Jan (2021), č. článku 108223. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110; GA ČR(CZ) GA20-11140S; GA ČR GA17-05259S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: boron-doped diamond * electrical properties * (113) oriented epitaxial diamond
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.806, rok: 2021
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.diamond.2020.108223

Recent works indicate that boron-doped and phosphorous-doped diamond can be grown on atomically stepped (113) surfaces (A. Tallaire et al., 2016, M.-A. Pinault-Thaury et al., 2019), however the electrical properties of these layers have not been studied in detail. In this work, we report on structural and electrical properties of boron-doped epitaxial diamond layers grown on (113) substrates. Properties of the diamond layers have been investigated by means of scanning electron microscopy, atomic force microscopy, Hall effect, secondary ion mass spectrometry and Raman spectroscopy. Our results show that boron-doped diamond layers can be grown on (113) substrates at high deposition rates with atomically flat surfaces, excellent electrical properties and high boron incorporation efficiency.
Trvalý link: http://hdl.handle.net/11104/0319277