Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions

0496731 - ÚJF 2019 RIV US eng J - Článek v odborném periodiku
Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Sedmidubský, D. - Klímová, K. - Bottger, R. - Akhmadaliev, S.
Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions.
Surface and Interface Analysis. Roč. 50, č. 11 (2018), s. 1099-1105. ISSN 0142-2421. E-ISSN 1096-9918.
[17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017). Monpellier, 24.09.2017-29.09.2017]
Grant CEP: GA MŠMT EF16_013/0001812; GA MŠMT LM2015056; GA ČR GA15-01602S
Institucionální podpora: RVO:61389005
Klíčová slova: damage accumulation in GaN * RBS channeling in ion-modified GaN * structure modification in c-plane and a-plane GaN
Obor OECD: Nuclear physics
Impakt faktor: 1.319, rok: 2018

c-plane (0001) and a-plane (11-20) gallium nitride (GaN) epitaxial layers were grown by Metal organic Vapour Phase epitaxy (MOVPE) on sapphire and subsequently implanted with 400-keV and 5-MeV Au+ ions using fluences 5 x 10(14) to 5 x 10(15) cm(-2). The shallow Au depth profiling was accomplished by Rutherford backscattering spectrometry. The structural changes during implantation and subsequent annealing were characterised by Rutherford backscattering spectrometry channelling and Raman spectroscopy. The interplay between nuclear and electronic stopping, influencing defect accumulation, was monitored and discussed depending on GaN orientation. Post-implantation annealing induced a structural reorganisation of the GaN structure depending on the ion-implantation fluence, ion energy, and on the crystallographic orientation.
Trvalý link: http://hdl.handle.net/11104/0289383