The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal

0479631 - ÚJF 2018 RIV NL eng J - Článek v odborném periodiku
Mikšová, Romana - Macková, Anna - Malinský, Petr
The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal.
Nuclear Instruments & Methods in Physics Research Section B. Roč. 406, SEP (2017), s. 179-184. ISSN 0168-583X. E-ISSN 1872-9584
Grant CEP: GA MŠMT LM2015056; GA ČR GA15-01602S
Institucionální podpora: RVO:61389005
Klíčová slova: energy-loss measurement * SOI material * RBS-channelling
Obor OECD: Nuclear physics
Impakt faktor: 1.323, rok: 2017

We have measured the electronic stopping powers of helium and lithium ions in the channelling direction of the Si 100 crystal. The energy range used (2.0-8.0 MeV) was changed by 200 and 400-keV steps. The ratio a between the channelling and random stopping powers was determined as a function of the angle for 2, 3 and 4 MeV He-4(+) ions and for 3 and 6 MeV Li-7(+.2+) ions. The measurements were carried out using the Rutherford backscattering spectrometry in the channelling mode (RBS-C) in a silicon-on-insulator material. The experimental channelling stopping-power values measured in the channelling direction were then discussed in the frame of the random energy stopping predictions calculated using SRIM-2013 code and the theoretical unitary convolution approximation (UCA) model. The experimental channelling stopping-power values decrease with increasing ion energy. The stopping-power difference between channelled and randomly moving ions increases with the enhanced initial ion energy. The ratio between the channelling and random ion stopping powers alpha as a function of the ion beam incoming angle for 2, 3 and 4 MeV He+ ions and for 3 and 6 MeV Li+.2+ ions was observed in the range 0.5-1.
Trvalý link: http://hdl.handle.net/11104/0275605