Počet záznamů: 1
Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling
- 1.0341424 - ÚPT 2010 RIV US eng J - Článek v odborném periodiku
Kettle, J. - Whitelegg, S. - Song, M. - Madec, M. B. - Yeates, S. - Turner, M. L. - Kotačka, L. - Kolařík, Vladimír
Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling.
Journal of Vacuum Science & Technology B. Roč. 27, č. 6 (2009), s. 2801-2804. ISSN 1071-1023. E-ISSN 2166-2754
Grant CEP: GA ČR GA102/05/2325
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: argon * milling * nanolithography * organic semiconductors * semiconductor diodes
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.460, rok: 2009
In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range.
Trvalý link: http://hdl.handle.net/11104/0184421
Počet záznamů: 1