0304285 - URE-Y 20040054 RIV NL eng J - Článek v odborném periodiku
Franzreb, K. - Williams, P. - Lörinčík, Jan - Šroubek, Zdeněk
Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O₂⁺ bombardment.
Applied Surface Science. 203-204, - (2003), s. 39-42. ISSN 0169-4332. E-ISSN 1873-5584
Grant ostatní: KONTAKT National Science Foundation(XE) CHE-0091328
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: ionisation * sputtering
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.284, rok: 2003

The investigation is described of an apparent bombarding energy threshold for formation of O++ backscattered from silion surface under O2 bombardment. From the experiment it is deduced that O++ is formed in asymmetric _{_}Si-O collision via collisional double ionization of oxygen 2p inner shells.
Trvalý link: http://hdl.handle.net/11104/0003150