0134299 - FZU-D 20030195 RIV US eng J - Článek v odborném periodiku
Toušková, J. - Kindl, Dobroslav - Blahitka, B. - Toušek, J. - Hulicius, Eduard - Pangrác, Jiří - Samokhin, Jevgen - Šimeček, Tomislav - Výborný, Zdeněk
Current-voltage characteristics of GaSb homojunctions prepared by MOVPE.
Solid-State Electronics. Roč. 47, - (2003), s. 1471-1478. ISSN 0038-1101. E-ISSN 1879-2405
Grant CEP: GA AV ČR IAA1010806; GA AV ČR KSK1010104
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: current-voltage characteristics * MOVPE * charge transport * GaSb * Shockly-Read-Hall recombination model
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.008, rok: 2003

mechanism of charge transport through GaSb p-n homojunctions prepared by low pressure metal organic vapour phase epitaxy technology was studied. Analysis of temperature dependences of some parameters of the experimental characteristics gave, besides the expected value of band gap energy, also the activation energy of the recombination level.
Trvalý link: http://hdl.handle.net/11104/0032209