0133801 - FZU-D 20020081 RIV NL eng J - Článek v odborném periodiku
Savchenkov, Aleksei - Shukrinov, Pavel - Mutombo, Pingo - Slezák, J. - Cháb, Vladimír
Initial stages of Cu/Si interface formation.
Surface Science. 507-510, - (2002), s. 889-894. ISSN 0039-6028. E-ISSN 1879-2758
Grant CEP: GA ČR GA202/99/P001; GA ČR GV202/98/K002
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: copper * surface chemical reaction * scanning tunneling microscopy * surface segregation * silicon
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.140, rok: 2002

The adsorption of Cu atoms on a Si(111)-7 x 7 surface was studied using scanning tunnelling microscopy. The flash up to ~550 řC stimulates a reaction leading to massive re-arrangement of the surface resulting in the formation of 7 x 7 domains separated by disordered regions.
Trvalý link: http://hdl.handle.net/11104/0031757