0133615 - FZU-D 20010415 RIV CH eng J - Článek v odborném periodiku
Guziewicz, E. - Kowalski, B. J. - Mašek, Jan - Orlowski, B. A. - Johnson, R. L.
Transition metal 3d states in HgSe-based diluted magnetic semiconductors.
Journal of Alloys and Compounds. Roč. 328, - (2001), s. 119-125. ISSN 0925-8388. E-ISSN 1873-4669
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: diluted magnetic semiconductors * resonant photoemission * electronic band structure
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 0.953, rok: 2001

The contribution of transition metal 3d states to the valence band of HgSe doped with Mn, Fe, and Co was investigated by resonant photoemission and CPA calculations.
Trvalý link: http://hdl.handle.net/11104/0031578