0133609 - FZU-D 20010409 RIV US eng J - Článek v odborném periodiku
Mahan, A. H. - XU, Y. - Williamson, D. L. - Beyer, W. - Perkins, J. D. - Vaněček, Milan - Gedvilas, L. M. - Nelson, B. P.
Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 A/s.
Journal of Applied Physics. Roč. 90, č. 10 (2001), s. 5038-5047. ISSN 0021-8979. E-ISSN 1089-7550
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: amorphous silicon structure * defect density * Staebler-Wronski effect * short and medium range order
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.128, rok: 2001

The structure ofa-Si:H, deposited at rates in excess of 100 A/s by the hot wire chemical vapor deposition technique, has been examined by x-ray diffraction, raman spectroscopy, H evolution, and small-angle x-ray scattering.
Trvalý link: http://hdl.handle.net/11104/0031572