0133004 - FZU-D 20000363 RIV US eng J - Článek v odborném periodiku
Novák, Vít - Cukr, Miroslav - Schowalter, D. - Prettl, W.
Electron mobility in .I.n./I.-GaAs at low-temperature impurity breakdown.
Physical Review. B. Roč. 62, č. 24 (2000), s. 16768-16772. ISSN 0163-1829
Grant CEP: GA AV ČR IAA1010011
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.065, rok: 2000

Using a combination of the standard Hall technique and the photoluminescence imaging of galvanomagnetic transport, free-electron density and mobility have been measured in the regime of filamentary current flow after the electric breakdown of n-GaAs at the temperature of liquid helium.
Trvalý link: http://hdl.handle.net/11104/0030995