Role of ion bombardment in forming CN.sub.x./sub. and CN.sub.x./sub.H.sub.y./sub. films deposited by r.f. - magnetron reactive sputtering and ECR plasma-activated CVD methods

Name: Role of ion bombardment in forming CN.sub.x./sub. and CN.sub.x./sub.H.sub.y./sub. films deposited by r.f. - magnetron reactive sputtering and ECR plasma-activated CVD methods
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Shaginyan, L. R.; Onoprienko, A. A.; Vereschaka, V. M.; Fendrych, František; Vysotsky, V. G.

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Role of ion bombardment in forming CN.sub.x./sub. and CN.sub.x./sub.H.sub.y./sub. films deposited by r.f. - magnetron reactive sputtering and ECR plasma-activated CVD methods

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0132929 - FZU-D 20000187 RIV CH eng J - Článek v odborném periodiku
Shaginyan, L. R. - Onoprienko, A. A. - Vereschaka, V. M. - Fendrych, František - Vysotsky, V. G.
Role of ion bombardment in forming CN_x and CN_xH_y films deposited by r.f. - magnetron reactive sputtering and ECR plasma-activated CVD methods.
Surface and Coatings Technology. Roč. 113, - (1999), s. 134-139. ISSN 0257-8972. E-ISSN 1879-3347
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.008, rok: 1999

Film composition (N/C ratio) and growth rate (Vg) were investigated, depending on the type (d.c. or r.f.) and level of substrate bias in the range 2 to -200V.
Trvalý link: http://hdl.handle.net/11104/0030921

Počet záznamů: 1