0132780 - FZU-D 20000032 RIV DE eng J - Článek v odborném periodiku
Valenta, J. - Dian, J. - Luterová, Kateřina - Knápek, Petr - Pelant, Ivan - Nikl, Martin - Muller, D. - Grob, J. J. - Rehspringer, J. L. - Hönerlage, B.
Temperature behavior of optical properties of Si⁺ - implanted SiO₂.
European Physical Journal D. Roč. 8, - (2000), s. 395-398. ISSN 1434-6060. E-ISSN 1434-6079
Grant CEP: GA ČR GA202/98/0669; GA AV ČR IAA1010809; GA AV ČR IAB1112901
Grant ostatní: NATO grant(XX) HTECH.LG972051
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.421, rok: 2000

Silicon nanocrystals were prepared by Si+-ion implantation and subswquent annealing of SiO2 films thermally grown on a c-Si wafer. It is shown that all PL characteristics (eficiency, dynamics, temperature dependence, excitaqtion spectra) of the Si+-implanted SiO2 films bear close resemblance to those of a light-emitting porous Si and therefore are supposed similar PL origin in both materials.
Trvalý link: http://hdl.handle.net/11104/0030781