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RIR MAPLE Procedure for Deposition of Carbon Rich Si/C/H Films

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    0424399 - ÚCHP 2014 RIV NL eng J - Článek v odborném periodiku
    Dřínek, Vladislav - Strašák, Tomáš - Novotný, F. - Fajgar, Radek - Bastl, Zdeněk
    RIR MAPLE Procedure for Deposition of Carbon Rich Si/C/H Films.
    Applied Surface Science. Roč. 292, FEB 15 (2014), s. 413-419. ISSN 0169-4332. E-ISSN 1873-5584
    Grant CEP: GA ČR GA13-25747S
    Grant ostatní: MŠMT(CZ) RVO6840770
    Institucionální podpora: RVO:67985858 ; RVO:61388955
    Klíčová slova: MAPLE * dendrimer * SiC * DLC * cross-kinking
    Kód oboru RIV: CA - Anorganická chemie
    Impakt faktor: 2.711, rok: 2014

    We applied the resonant infrared matrix assisted pulsed laser evaporation (RIR MAPLE) technique todemonstrate a new approach to a controlled deposition of carbon rich amorphous Si/C/H film. In absenceof radicals and accelerated species commonly generated in PECVD and sputtering setups, the RIR MAPLEmethod does not decompose precursor molecules. Moreover, unlike the standard MAPLE procedure, inwhich solvent molecules absorb laser energy from excimer or near infrared lasers, we applied the pulsedTEA CO2laser to excite the dendrimer precursor molecules in a frozen target. In this manner we achievedjust cross-linking of the starting precursor on substrates and the deposition of carbon rich Si/C/H film. Thefilm was analyzed by Fourier Transformed Infrared (FTIR), UV/VIS, Raman and X-ray Photoelectron (XPS)spectroscopy and Atomic Force Microscopy (AFM) technique. According to analyses the film retained theprecursor elemental composition free of graphitic (sp2) clusters. In course of reaction only the peripheralallyl groups containing C=C bonds were opened to achieve cross-linking. Whereas annealing to 300◦Cwas necessary for the elimination of =C–H1,2bonds in the films prepared at 200◦C, those bonds vanishedcompletely for the films prepared at substrate temperature 255◦C. The film posseses a smooth surfacewith root mean square (RMS) parameter up to 10 nm within scanned distance 2.5 m...
    Trvalý link: http://hdl.handle.net/11104/0230464

     
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