0619388 - ÚFCH JH 2026 RIV US eng J - Článek v odborném periodiku
Sahu, Satyam - Volochanskyi, Oleksandr - Varade, V. - Pirker, Luka - Zólyomi, V. - Koltai, J. - Mosina, K. - Sofer, Z. - Frank, Otakar - Vejpravová, J. - Kalbáč, Martin - Velický, Matěj
Tuning of MoS₂ Photoluminescence in Heterostructures with CrSBr.
ACS Applied Materials and Interfaces. Roč. 17, č. 17 (2025), s. 25693-25701. ISSN 1944-8244. E-ISSN 1944-8252
Grant CEP: GA ČR(CZ) GA22-04408S; GA ČR(CZ) GX20-08633X; GA MŠMT EH22_008/0004558
Grant ostatní: AV ČR(CZ) LQ200402201
Program: Prémie Lumina quaeruntur
Institucionální podpora: RVO:61388955
Klíčová slova: monolayer mos2 * generation * exciton * MoS2 * CrSBr * heterostructures * photoluminescence * enhancement * quenching * optoelectronics
Obor OECD: Physical chemistry
Impakt faktor: 8.5, rok: 2023 ; AIS: 1.578, rok: 2023
Způsob publikování: Open access
DOI: https://doi.org/10.1021/acsami.5c01924

Monolayers of semiconducting transition metal dichalcogenides (TMDCs) are known for their unique excitonic photoluminescence (PL), which can be tuned by interfacing them with other materials. However, integrating TMDCs into van der Waals heterostructures often results in a significant quenching of the PL because of an increased rate of nonradiative recombination processes. We demonstrate a wide-range tuning of the PL intensity of monolayer MoS2 interfaced with another layered semiconductor, CrSBr. We discover that a thin CrSBr up to approximate to 20 nm in thickness enhances the PL of MoS2, while a thicker material causes PL quenching, which is associated with changes in the excitonic makeup driven by the charge redistribution in the CrSBr/MoS2 heterostructure. Transport measurements, Kelvin probe force microscopy, and first-principles calculations indicate that this charge redistribution most likely causes n- to p-type doping transition of MoS2 upon contact with CrSBr, facilitated by the type II band alignment and the tendency of CrSBr to act as an electron sink. Furthermore, we fabricate an efficient AC-regime photodetector with a responsivity of 10(5) A/W from a MoS2/CrSBr heterostructure.
Trvalý link: https://hdl.handle.net/11104/0366123