0597597 - FZÚ 2025 RIV NL eng J - Článek v odborném periodiku
Bohlemann, C.Y. - Flötotto, A. - Paszuk, A. - Nandy, M. - Großmann, M. - Romanyuk, Olexandr - Hanke, K.D. - Gieß, A. - Kleinschmidt, P. - Runge, E. - Hannappel, T.
Surface structure of MOVPE-prepared As-modified Si(100) substrates.
Applied Surface Science. Roč. 675, Nov (2024), č. článku 160879. ISSN 0169-4332. E-ISSN 1873-5584
Grant CEP: GA ČR GC18-06970J
Institucionální podpora: RVO:68378271
Klíčová slova: Si(100) * III-V-on Si * low-defects growth * MOVPE * surface structure analysis * DFT
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.3, rok: 2023
Způsob publikování: Open access

In the pursuit of high-efficiency tandem devices for solar energy conversion based on III-V-semiconductors, low-defect III-V nucleation on Si(100) substrates is essential. Here, hydrogen and arsenic are key ingredients in all growth processes with respect to industrially scalable metalorganic vapor phase epitaxy. Our study provides insight into Si(100) surface preparation for the initial stage of III-V nucleation. The samples investigated, prepared on substrates with different offcut angles, show single domain surfaces consisting of rows of preferentially buckled dimers. Low energy electron diffraction and reflection anisotropy spectroscopy confirm well-defined (1 × 2)/(2 × 1) majority domains. Fourier-transform infrared spectroscopy revealed hydrogen bonding to the surface dimers, while no impurities were found by XPS. Density functional theory calculations support the experimental results and reveal a novel surface motif of H-passivated Si-As mixed dimers.
Trvalý link: https://hdl.handle.net/11104/0355626