Comparison between conventional Si and new generation of SiC detector for high proton energy spectrometry

0586150 - ÚJF 2025 RIV GB eng J - Článek v odborném periodiku
Torrisi, L. - Havránek, Vladimír - Macková, Anna - Calcagno, L. - Torrisi, A. - Cutroneo, Mariapompea
Comparison between conventional Si and new generation of SiC detector for high proton energy spectrometry.
Journal of Instrumentation. Roč. 19, č. 4 (2024), č. článku P04032. ISSN 1748-0221. E-ISSN 1748-0221
Grant CEP: GA ČR GA23-06702S; GA MŠMT EF16_013/0001812
Institucionální podpora: RVO:61389005
Klíčová slova: Solid state detectors * Spectrometers * Detector design and construction technologies and materials
Obor OECD: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impakt faktor: 1.3, rok: 2022
Způsob publikování: Open access
https://doi.org/10.1088/1748-0221/19/04/P04032

A SiC Schottky diode and a Si surface barrier detector have been compared during Rutherford backscattering spectrometry (RBS) using 2-3 MeV proton beams. Both detectors are suited to detect high energetic ions with high-energy resolution for spectroscopic analysis. The correlations between the detector parameters and the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency and energy resolution, are outlined. Comparative RBS analysis performed using SiC and Si detectors has been investigated to highlight the advantages and disadvantages of the use of SiC with respect to the traditional Si junction detector. RBS spectrometry has been carried out using projectiles of proton incident on different targets to analyse their composition and thickness by the detection of the backscattered ions revealed by Si and SiC detectors.
Trvalý link: https://hdl.handle.net/11104/0353741