Momentum-dependent intraband high harmonic generation in a photodoped indirect semiconductor

0584821 - FZÚ 2025 RIV US eng J - Článek v odborném periodiku
Suthar, P. - Trojánek, F. - Malý, P. - Derrien, Thibault - Kozák, M.
Momentum-dependent intraband high harmonic generation in a photodoped indirect semiconductor.
COMMUNICATIONS PHYSICS. Roč. 7, č. 1 (2024), č. článku 104. ISSN 2399-3650. E-ISSN 2399-3650
Grant CEP: GA MŠMT(CZ) EH22_008/0004596; GA MŠMT(CZ) EH22_008/0004594
Výzkumná infrastruktura: e-INFRA CZ II - 90254
Institucionální podpora: RVO:68378271
Klíčová slova: electronic properties and materials * high-harmonic generation * nonlinear optics
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 5.5, rok: 2022
Způsob publikování: Open access

Nonlinear optical response of solid-state materials exposed to strong non-resonant light fields leads to the generation of harmonic frequencies as a consequence of interband polarization and coherent intraband dynamics of the electrons. The efficient production of a macroscopic wave requires the preservation of the mutual phase between the driving wave and the individual microscopic sources of radiation. Here, we experimentally and theoretically show that the yield of high harmonic generation in a photodoped silicon crystal is enhanced by the nonlinear intraband current whose amplitude depends not only on the volume density of the photogenerated carriers but also on their momentum distributions within the bands. The strongest enhancement is reached when the carrier system is relaxed to the band minima before interacting with the strong nonresonant wave, which drives the high harmonic generation. These results extend the possibilities of high harmonic spectroscopy towards the investigation of ultrafast carrier relaxation in condensed matter.
Trvalý link: https://hdl.handle.net/11104/0353740

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