Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles

0583312 - ÚT 2024 RIV US eng J - Článek v odborném periodiku
Gastaldo, M. - Varillas, Javier - Rodriguez, A. - Velický, M. - Frank, O. - Kalbáč, M.
Tunable strain and bandgap in subcritical-sized MoS2 nanobubbles.
NPJ 2D MATER APPL. Roč. 7, č. 1 (2023), č. článku 71. E-ISSN 2397-7132
Grant CEP: GA ČR(CZ) GA22-04408S; GA ČR(CZ) GX20-08633X
Institucionální podpora: RVO:61388998
Klíčová slova: energy gap * molecular dynamics * Layered semiconductors
Obor OECD: Materials engineering
Impakt faktor: 9.7, rok: 2022
Způsob publikování: Open access
https://www.nature.com/articles/s41699-023-00432-x

Nanobubbles naturally formed at the interface between 2D materials and their substrate are known to act as exciton recombination centers because of the reduced bandgap due to local strain, which in turn scales with the aspect ratio of the bubbles. The common understanding suggests that the aspect ratio is a universal constant independent of the bubble size. Here, by combining scanning tunneling microscopy and molecular dynamics, we show that the universal aspect ratio breaks down in MoS2 nanobubbles below a critical radius (approximate to 10 nm), where the aspect ratio increases with increasing size. Accordingly, additional atomic-level analyses indicate that the strain increases from 3% to 6% in the sub-critical size range. Using scanning tunneling spectroscopy, we demonstrate that the bandgap decreases as a function of the size. Thus, tunable quantum emitters can be obtained in 2D semiconductors by controlling the radius of the nanobubbles.
Trvalý link: https://hdl.handle.net/11104/0351303