Dielectric Response and Low Dielectric Loss of Gadolinium-Doped CaCu3Ti4O12Ceramics Processed Through Conventional and Microwave Sintering

0583134 - ÚFP 2024 RIV DE eng J - Článek v odborném periodiku
Evangeline, T. G. - Annamalai, A. R. - Ctibor, Pavel
Dielectric Response and Low Dielectric Loss of Gadolinium-Doped CaCu3Ti4O12Ceramics Processed Through Conventional and Microwave Sintering.
Journal of Electronic Materials. Roč. 52, č. 6 (2023), s. 3848-3858. ISSN 0361-5235. E-ISSN 1543-186X
Institucionální podpora: RVO:61389021
Klíčová slova: CaCu Ti O 3 4 12 * conventional sintering (CS) * dielectric loss * gadolinium * iblc * microwave sintering (MWS)
Obor OECD: Ceramics
Impakt faktor: 2.1, rok: 2022
Způsob publikování: Omezený přístup
https://link.springer.com/article/10.1007/s11664-023-10341-w

Gadolinium-doped (CaCu3Ti4O12/CCTO)x ceramics were fabricated using conventional (CS) and microwave sintering (MWS) at x = 0.1, 0.2 and 0.3. The green compacts were sintered at 1100°C via muffle and microwave furnace at 5°C min−1/12 h and 50°C min−1/30 min, respectively. A single pure cubic phase of CCTO for MWS and minor secondary phases for CS were revealed by x-ray diffraction (XRD) patterns. Scanning electron microscope (SEM) images showed a reduction in grain size from ~ 20.04 ± 8.43 µm to ~ 17.52 ± 7.77 µm and ~ 1.99 ± 0.44 µm to ~ 1.32 ± 0.27 µm for both CS and MWS. The charge carrier hopping between Cu+ and Ti3+ was probed using x-ray photoelectron spectroscopy (XPS), which confirmed the conductivity of grains and internal barrier layer capacitance (IBLC) effect. Broadband dielectric spectrometer findings revealed a dielectric constant of ɛ > 104 at 10 Hz and ɛ > 103 at 100 kHz for CS at x = 0.2 and ɛ > 102 at 10 Hz (x ≤ 0.2) for MWS. A very minimal tanδ of 0.08 (x = 0.2) was recorded at 100 kHz.
Trvalý link: https://hdl.handle.net/11104/0351126