Heat capacity of indium or gallium sesqui-chalcogenides

0582308 - ÚMCH 2025 RIV CH eng J - Článek v odborném periodiku
Růžička, K. - Pokorný, Václav - Plutnar, J. - Plutnarová, I. - Wu, B. - Sofer, Z. - Sedmidubský, D.
Heat capacity of indium or gallium sesqui-chalcogenides.
Materials. Roč. 17, č. 2 (2024), č. článku 361. E-ISSN 1996-1944
Institucionální podpora: RVO:61389013
Klíčová slova: In * Ga * sesqui-chalcogenides
Obor OECD: Polymer science
Impakt faktor: 3.4, rok: 2022
Způsob publikování: Open access
https://www.mdpi.com/1996-1944/17/2/361

The chalcogenides of p-block elements constitute a significant category of materials with substantial potential for advancing the field of electronic and optoelectronic devices. This is attributed to their exceptional characteristics, including elevated carrier mobility and the ability to fine-tune band gaps through solid solution formation. These compounds exhibit diverse structures, encompassing both three-dimensional and two-dimensional configurations, the latter exemplified by the compound In2Se3. Sesqui-chalcogenides were synthesized through the direct reaction of highly pure elements within a quartz ampoule. Their single-phase composition was confirmed using X-ray diffraction, and the morphology and chemical composition were characterized using scanning electron microscopy. The compositions of all six materials were also confirmed using X-ray photoelectron spectroscopy and Raman spectroscopy. This investigation delves into the thermodynamic properties of indium and gallium sesqui-chalcogenides. It involves low-temperature heat capacity measurements to evaluate standard entropies and Tian–Calvet calorimetry to elucidate the temperature dependence of heat capacity beyond the reference temperature of 298.15 K, as well as the enthalpy of formation assessed from DFT calculations.
Trvalý link: https://hdl.handle.net/11104/0350428