Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal

0582012 - ÚFCH JH 2024 RIV US eng J - Článek v odborném periodiku
Chin, H. T. - Wang, D. - Gulo, D. P. - Yao, Y.-Ch. - Yeh, H. - Muthu, J. - Chen, D. R. - Kao, T. - Kalbáč, Martin - Lin, P. - Cheng, C. - Hofmann, M. - Liang, Ch.-T. - Liu, H. L. - Chuang, F.-C. - Hsieh, Y.-P.
Tungsten Nitride (W5N6): An Ultraresilient 2D Semimetal.
Nano Letters. Roč. 24, č. 1 (2023), s. 67-73. ISSN 1530-6984. E-ISSN 1530-6992
Institucionální podpora: RVO:61388955
Klíčová slova: tungsten nitride * semimetal * VLS growth * atomic etch stop * electrode
Obor OECD: Physical chemistry
Impakt faktor: 10.8, rok: 2022
Způsob publikování: Omezený přístup

Two-dimensional transition metal nitrides offer intriguing possibilities for achieving novel electronic and mechanical functionality owing to their distinctive and tunable bonding characteristics compared to other 2D materials. We demonstrate here the enabling effects of strong bonding on the morphology and functionality of 2D tungsten nitrides. The employed bottom-up synthesis experienced a unique substrate stabilization effect beyond van-der-Waals epitaxy that favored W5N6 over lower metal nitrides. Comprehensive structural and electronic characterization reveals that monolayer W5N6 can be synthesized at large scale and shows semimetallic behavior with an intriguing indirect band structure. Moreover, the material exhibits exceptional resilience against mechanical damage and chemical reactions. Leveraging these electronic properties and robustness, we demonstrate the application of W5N6 as atomic-scale dry etch stops that allow the integration of high-performance 2D materials contacts. These findings highlight the potential of 2D transition metal nitrides for realizing advanced electronic devices and functional interfaces.
Trvalý link: https://hdl.handle.net/11104/0350142