Controlled strong excitation of silicon as a step towards processing materials at sub-nanometer precision

0580611 - ÚFP 2024 RIV US eng J - Článek v odborném periodiku
Dinh, TH. - Medvedev, Nikita - Ishino, M. - Kitamura, T. - Hasegawa, N. - Otobe, T. - Higashiguchi, T. - Sakaue, K. - Washio, M. - Hatano, T. - Kon, A. - Kubota, Y. - Inubushi, Y. - Owada, S. - Shibuya, T. - Ziaja, B. - Nishikino, M.
Controlled strong excitation of silicon as a step towards processing materials at sub-nanometer precision.
COMMUNICATIONS PHYSICS. Roč. 2, č. 1 (2019), č. článku 150. ISSN 2399-3650. E-ISSN 2399-3650
Grant CEP: GA MŠMT LTT17015; GA MŠMT(CZ) LM2015083
Institucionální podpora: RVO:61389021
Klíčová slova: laser-ablation * femtosecond * thresholds * electrons * growth * beam
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 4.684, rok: 2019
Způsob publikování: Open access
https://www.nature.com/articles/s42005-019-0253-2

Interaction of a solid material with focused, intense pulses of high-energy photons or other particles (such as electrons and ions) creates a strong electronic excitation state within an ultra-short time and on ultra-small spatial scales. This offers the possibility to control the response of a material on a spatial scale less than a nanometer-crucial for the next generation of nano-devices. Here we create craters on the surface of a silicon substrate by focusing single femtosecond extreme ultraviolet pulse from the SACLA free-electron laser. We investigate the resulting surface modification in the vicinity of damage thresholds, establishing a connection to microscopic theoretical approaches, and, with their help, illustrating physical mechanisms for damage creation. The cooling during ablation by means of rapid electron and energy transport can suppress undesired hydrodynamical motions, allowing the silicon material to be directly processed with a precision reaching the observable limitation of an atomic force microscope.
Trvalý link: https://hdl.handle.net/11104/0349380