Design of a broadband polarization controller based on silicon nitride-loaded thin-film lithium niobate

0580463 - ÚFE 2024 RIV US eng J - Článek v odborném periodiku
Čtyroký, Jiří - Petráček, J. - Richter, I. - Kuzmiak, Vladimír
Design of a broadband polarization controller based on silicon nitride-loaded thin-film lithium niobate.
Optics Express. Roč. 31, č. 22 (2023), s. 35542-35551. ISSN 1094-4087
Institucionální podpora: RVO:67985882
Klíčová slova: Lithium * Niobium compounds * Electric potential * Thin films
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 3.8, rok: 2022
Způsob publikování: Open access
https://doi.org/10.1364/OE.501411

A novel design of a polarization controller based on “etch-less” Si3N4-loaded thin film LiNbO3 is described. Broadband operation in the spectral range between 1.45 and 1.65 µm is achieved by using a mode evolution TM/TE splitter/converter, two mode evolution 3-dB couplers, and two electro-optic phase shifters. Numerical simulations show that the on-chip insertion loss should not exceed 1 dB. A single TE-mode output can be adjusted by applying control voltages lower than 10 V for an arbitrary input polarization state
Trvalý link: https://hdl.handle.net/11104/0349229