Kelvin probe characterization of nanocrystalline diamond films with SiV centers as function of thickness

0579808 - FZÚ 2025 RIV US eng J - Článek v odborném periodiku
Kuliček, J. - Marek, M. - Kumar, N. - Fait, Jan - Potocký, Š. - Stehlík, Štěpán - Kromka, Alexander - Rezek, B.
Kelvin probe characterization of nanocrystalline diamond films with SiV centers as function of thickness.
Physica Status Solidi A. Roč. 221, č. 8 (2024), č. článku 2300459. ISSN 1862-6300. E-ISSN 1862-6319
Grant CEP: GA ČR(CZ) GF23-04322L
Grant ostatní: AV ČR(CZ) LQ100102001
Program: Prémie Lumina quaeruntur
Institucionální podpora: RVO:68378271
Klíčová slova: Kelvin probe * nanodiamond films * silicon vacancy (SiV) centers * thicknesses * work functions
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2, rok: 2022
Způsob publikování: Open access

Optically active color centers in diamonds have been intensively studied due to their potential in photonics, energy harvesting, biosensing and quantum computing. SiV center offers an advantage of suitable emission wavelength and narrow zero-phonon line at room temperature. Measurement of surface potential and photovoltage can provide better understanding of the physics and control of SiV light emission, such as charge states and charging effects. Here we study optoelectronic properties of nanocrystalline diamond (NCD) films with SiV centers at different layer thicknesses (10-200 nm, controlled by the growth time) under ambient conditions. Time-dependent measurements are performed in the light-dark-light cycle. Positive photovoltage arises on samples with SiV layer thicknesses below 55 nm on both H-terminated and O-terminated surfaces. Above 55 nm the photovoltage switches to negative. This layer thickness thus represents a boundary between surface-controllable and bulk SiV centers.
Trvalý link: https://hdl.handle.net/11104/0353241