Nanoscale investigation on the improvement of electrical properties of boron-doped diamond nanostructures for high-performance plasma displays

0579329 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Suman, S. - Sharma, Dhananjay K. - Sain, S. - Szabó, Ondrej - Sethy, S.K. - Rakesh, B. - Balaji, U. - Marton, M. - Vojs, M. - Roy, S.S. - Sakthivel, R. - Sankaran, K.J. - Kromka, Alexander
Nanoscale investigation on the improvement of electrical properties of boron-doped diamond nanostructures for high-performance plasma displays.
ACS Applied Electronic Materials. Roč. 5, č. 9 (2023), s. 4946-4958. E-ISSN 2637-6113
Grant CEP: GA ČR(CZ) GF23-04322L
Výzkumná infrastruktura: CzechNanoLab II - 90251
Institucionální podpora: RVO:68378271
Klíčová slova: boron-doped diamond * reactive ion etching * diamond nanostructures * emission sites * microplasma illumination
Obor OECD: Fluids and plasma physics (including surface physics)
Impakt faktor: 4.7, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1021/acsaelm.3c00713

Electrically conducting vertically aligned boron-doped diamond (BDD) nanostructures are fabricated from BDD films by reactive ion etching (RIE) using Au masks. Two different morphologies of BDD films, microcrystalline BDD (BMCD) and ultrananocrystalline BDD (BUNCD), are utilized to fabricate nanorods. The formation of nanorods is controlled via the size of Au particles on the surface of diamond films. High electrical conductivity of 7.9 × 103 S/cm at 573 K is achieved for the nanorods formed on BMCD films and using an Au mask with a large particle size (BMCDL). Conducting atomic force microscopy (C-AFM) studies show that high emission sites are observed in BMCDL nanorods. These highly conducting BMCDL nanorods are used as cathodes in plasma illumination (PI) devices, which exhibit improved characteristics such as a low breakdown voltage of 360 V and high plasma current density of 8.0 mA/cm2 with high plasma lifetime stability of 51 min.
Trvalý link: https://hdl.handle.net/11104/0348173