Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

0578172 - ÚFM 2024 RIV US eng J - Článek v odborném periodiku
Pongrácz, Jakub - Vacek, P. - Gröger, Roman
Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid.
Journal of Applied Physics. Roč. 134, č. 19 (2023), č. článku 195704. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA TA ČR(CZ) FW01010183; GA MŠMT(CZ) EF18_053/0016933
Výzkumná infrastruktura: CzechNanoLab - 90110
Institucionální podpora: RVO:68081723
Klíčová slova: Crystallographic defects * Crystal lattices * Crystal structure * Epitaxy * Etching * Atomic force microscopy
Obor OECD: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Impakt faktor: 3.2, rok: 2022
Způsob publikování: Omezený přístup
https://pubs.aip.org/aip/jap/article-abstract/134/19/195704/2921456/Recombination-activity-of-threading-dislocations?redirectedFrom=fulltext

Epitaxial growth of wurtzite AlN films on Si {111} results in 19% lattice misfit, which gives rise to a large density of threading dislocations
with different recombination rates of electron–hole pairs. Here, we investigate types and distributions of threading dislocations of the
MOVPE-grown 200 nm AlN/Si {111} film, whereby the dislocations are visualized using the technique of wet chemical etching. Atomic
force microscopy suggests the existence of four different types of etch pits without any topological differences. Cross-sectional transmission
electron microscope studies on etched samples are employed to associate the types of dislocations with the shapes of their etch pits. The
recombination activity of individual dislocations was quantified by measuring the electron beam induced current and by correlative
measurement of topography, secondary electron imaging, and the electron beam absorbed current. The strongest recombination activity was
obtained for the m + c-type (mixed), c-type (screw), and a + c-type (mixed) threading dislocations, whereas the a-type (edge) threading
dislocations were nearly recombination-inactive.
Trvalý link: https://hdl.handle.net/11104/0347224