Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers

0578139 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Hazdra, P. - Laposa, A. - Šobáň, Z. - Kroutil, J. - Lambert, Nicolas - Povolný, V. - Taylor, Andrew - Mortet, Vincent
Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers.
Physica Status Solidi A. Roč. 220, č. 23 (2023), č. článku 2300508. ISSN 1862-6300. E-ISSN 1862-6319
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA20-11140S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Výzkumná infrastruktura: CzechNanoLab II - 90251
Institucionální podpora: RVO:68378271
Klíčová slova: boron-doped diamond (BDD) * pseudo-vertical Schottky barrier diodes (pVSBDs) * ruthenium (Ru) ohmic contact * ruthenium (Ru) Schottky contact
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1002/pssa.202300508

Electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) pre-pared on (113)–oriented boron-doped diamond (BDD) layers using ruthenium(Ru) for both the ohmic and Schottky contacts are investigated. First, Ru ohmiccontacts are evaporated on homoepitaxial BDD layers with different resistivity,and their specific contact resistance is measured using circular transfer lengthmethod structures after annealing at various temperatures up to 750 °C. Then,pVSBD structures are fabricated on the boron-doped bilayer consisting of a lower,heavily boron-doped layer ensuring an ohmic contact and an upper, lightly dopedlayer providing a rectifying Schottky contact. After necessary mesa etching, both contacts are formed by the Ru evaporation. The results show that Ru forms astable ohmic contact with very low contact resistance (10 5–10 6Ωcm2) whendeposited on BDD layers with metallic conductivity. It also provides anacceptable Schottky contact on low-doped (113) homoepitaxial BDD.
Trvalý link: https://hdl.handle.net/11104/0348945