Ultrafast infrared laser crystallization of amorphous Ge films on glass substrates

0577936 - FZÚ 2024 RIV CH eng J - Článek v odborném periodiku
Cheng, Y. - Bulgakov, Alexander - Bulgakova, Nadezhda M. - Beránek, Jiří - Zukerstein, Martin - Milekhin, I.A. - Popov, A. A. - Volodin, V.A.
Ultrafast infrared laser crystallization of amorphous Ge films on glass substrates.
Micromachines. Roč. 14, č. 11 (2023), č. článku 2048. E-ISSN 2072-666X
Grant CEP: GA MŠMT EF15_003/0000445
Grant ostatní: OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institucionální podpora: RVO:68378271
Klíčová slova: germanium * thin films * ultrashort infrared laser annealing * crystallization * Raman spectroscopy * nonrefractory substrates
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 3.4, rok: 2022
Způsob publikování: Open access

Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses. Crystallization of germanium irradiated at a laser energy density (fluence) range from 25 to 400 mJ/cm2 under single-shot and multishot conditions was investigated using Raman spectroscopy. The dependence of the fraction of the crystalline phase on the fluence was obtained for picosecond and femtosecond laser annealing. The regimes of almost complete crystallization of germanium films over the entire thickness were obtained (from the analysis of Raman spectra with excitation of 785 nm laser). The possibility of scanning laser processing is shown, which can be used to create films of micro- and nanocrystalline germanium on flexible substrates.
Trvalý link: https://hdl.handle.net/11104/0347013