Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations

0577456 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Holiatkina, M. - Pöppl, A. - Kalabukhova, E. - Lančok, Ján - Savchenko, Dariia
Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations.
Journal of Applied Physics. Roč. 134, č. 14 (2023), č. článku 145702. ISSN 0021-8979. E-ISSN 1089-7550
Grant CEP: GA MŠMT(CZ) EF16_019/0000760
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: silicon carbide * EPR * spin exchange * nitrogen donors
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.2, rok: 2022
Způsob publikování: Omezený přístup
https://doi.org/10.1063/5.0172320

In this manuscript, we provide a comprehensive study of the spin coupling dynamics between conduction electrons and N donors in monocrystalline 4H SiC with concentrations of N donors from 10^17 to 5×10^19 cm^−3 by EPR and MW perturbation techniques at T=4.2–300 K. At low T, two triplets due to N donors in cubic (Nk) hexagonal (Nh) positions and triplet arisen from spin-interaction between Nh and Nk were observed in 4H SiC with Nd−Na≈10^17 cm^−3. A single S-line dominates the EPR spectra in all investigated samples at high T. It was established that this line occurs due to the exchange coupling of localized electrons (dominate at low T) and non-localized electrons (dominate at high T). Using the theoretical fitting of the temperature variation of S-line EPR linewidth in 4H SiC with Nd–Na≤5×10^18 cm^−3, the energy levels of 57–65 meV that correlate with the valley-orbit splitting values for Nk in 4H SiC monocrystals were obtained.
Trvalý link: https://hdl.handle.net/11104/0346586