Influence of gas composition on growth of boron-doped diamond films

0575391 - FZÚ 2024 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Sharma, Dhananjay K. - Potocký, Š. - Aubrechtová Dragounová, Kateřina - Sankaran, K.J. - Rezek, B. - Kromka, Alexander
Influence of gas composition on growth of boron-doped diamond films.
Proceedings of ADEPT - ADEPT 2023. Žilina: University of Žilina, 2023 - (Jandura, D.; Lettrichová, I.; Kováč, jr., J.), s. 225-229. ISBN 978-80-554-1977-0.
[International Conference on Advances in Electronic and Photonic Technologies /11./ - ADEPT 2023. Podbanské (SK), 12.06.2023-15.06.2023]
Grant CEP: GA MŠMT LM2023051; GA ČR(CZ) GF23-04322L
Institucionální podpora: RVO:68378271
Klíčová slova: boron doped diamond * microwave CVD * nanodiamond * Raman * SEM * polycrystalline diamond * morphology
Obor OECD: Coating and films

Boron-doped diamond films (BDD) have recently attracted interest in many areas of R&D. In this contribution, we present the influence of gas composition on the crystal evolution of BDD films grown in a focused microwave plasma system. BDD films with a constant B/C ratio (2000 ppm) were successfully grown over a wide range of CH4 concentrations from 1.5 to 18 %. BDD kept its microcrystalline character up to a CH4 content as high as 9 %. The microcrystalline morphology changed to nanocrystalline at CH4 concentrations from 12 to 15 %. Finally, higher CH4 content than >15 % led to needle-like BDD. The effect of the gas mixture on the BDD film properties is discussed in terms of surface morphology (scanning electron microscopy, SEM), chemical composition (Raman spectroscopy), electrical conductivity (Hall and four-point measurement), and growth rate.
Trvalý link: https://hdl.handle.net/11104/0345198